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| STB80NF55-06 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 - 80A TO-220/TO-220FP/D2PAK STripFETTM II POWER MOSFET TYPE STB80NF55-06 STP80NF55-06 STP80NF55-06FP s s s s VDSS 55 V 55 V 55 V RDS(on) <0.0065 <0.0065 <0.0065 ID 80 A 80 A 60 A 3 1 2 s TYPICAL RDS(on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 TO-220FP D2PAK TO-263 (Suffix "T4") 3 1 2 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter INTERNAL SCHEMATIC DIAGRAM Value STB80NF55-06 STP80NF55-06 STP80NF55-06FP 55 55 20 80 80 320 300 2 7 1.3 ------55 to 175 2500 60 42 240 45 0.30 Unit VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature V V V A A A W W/C V/ns J V C (*) Pulse width limited by safe operating area. September 2002 (1) ISD 80A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 40A, VDD= 35V 1/11 NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55-06 @ B80NF55-06 @ P80NF55-06 @ STB80NF55-06 STP80NF55-06 STP80NF55-06FP THERMAL DATA D2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 TO-220FP 3.33 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 55 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 40 A Min. 2 Typ. 3 0.005 Max. 4 0.0065 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 40 A Min. Typ. 150 4400 1020 350 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 40 A VDD = 27 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 44 V ID= 80 A VGS= 10V Min. Typ. 27 155 142 29 60.5 193 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 40 A VDD = 27 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 125 65 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A VGS = 0 100 0.32 6.5 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A di/dt = 100A/s ISD = 80 A VDD = 35 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 10 8.5 4.88 15 1.27 1.4 2.4 0.4 8 0 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.016 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 8/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 G 9/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 10/11 STB80NF55-06 STP80NF55-06 STP80NF55-06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 11/11 |
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